• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권12호
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• pp.773-776
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• 1999

A newly proposed lateral dual-gate thyristor was fabricated and measured, which has excellent current saturation characteristics of $1200A/cm^2$ even at an anode-gate voltage of 29V, through the elimination of the structurally existing parasitic thyristor. And through the comparison with the LIGBT, the excellent current saturation characteristics of a newly proposed device was verified.