대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

$SiO_{x}F_{y}$/a-Si 구조에 엑시머 레이저 조사에 의해 불소화된 다결정 실리콘 박막 트랜지스터의 전기적 특성과 신뢰도 향상

Passivation Effects of Excimer-Laser-Induced Fluorine using $SiO_{x}F_{y}$ Pad Layer on Electrical Characteristics and Stability of Poly-Si TFTs

  • Kim, Cheon-Hong (Dept.of Electric Engineering, Seoul National University) ;
  • Jeon, Jae-Hong (Dept.of Electric Engineering, Seoul National University) ;
  • Yu, Jun-Seok (Dept.of Electric Engineering, Seoul National University) ;
  • Han, Min-Gu (Dept.of Electric Engineering, Seoul National University)
  • 발행 : 1999.09.01
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초록

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

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참고문헌

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