Annealing-temperature Dependent Characteristics of PLZT Thin Films on ITO Coated Glass

ITO 기판에 제작된 PLZT 박막의 소성온도에 따른 특성

  • 최형욱 (연세대학교 전기공학과) ;
  • 장낙원 (경원대학교 전기전자공학부) ;
  • 박창엽 (경원대학교 전기전자공학부)
  • Received : 1997.05.01
  • Accepted : 1997.10.07
  • Published : 1998.02.15

Abstract

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

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Acknowledgement

Supported by : 한국전력공사