Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Structural Characteristics of PLZT Thin Films with Zr/Ti Ratios Prepared by Sol-Gel Method

Sol-Gel 법으로 제작된 PLZT 박막의 Zr/Ti 비에 따른 구조 특성에 관한 연구

  • ;
  • ;
  • J. Dougherty (MRL, The Penn, State Univ) ;
  • 최형욱 (경원대학교 전기전자공학부) ;
  • 장낙원 (연세대학교 전기공학과) ;
  • ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1998.07.01
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Abstract

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

Keywords

References

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