Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Electron Transport in InAlAs/InGaAs HBT by Hybride Monte Carlo Simulation

Hybrid Monte Carlo 시뮬레이션에 의한 InAlAs/InGaAs HBT의 전자전송 해석

  • 송정근 (동아대학교 전기전자컴퓨터공학부) ;
  • 황성범 (경남전문대학교 전자통신과) ;
  • 이경락 (현대전자 시스템 IC 연구소)
  • Published : 1997.11.01
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Abstract

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

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