Development of finite element numerical simulation for three-dimensional oxidation

3차원 산화 공정을 위한 유한요소법 수치 해석기 개발에 관한 연구

  • 이제희 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막 기술연구소) ;
  • 윤상호 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막 기술연구소) ;
  • 송재복 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막 기술연구소) ;
  • 김윤태 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막 기술연구소) ;
  • 원태영 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막 기술연구소)
  • Published : 1997.03.01

Abstract

With continued miniaturization and development of new devices, the highly nonuniform oxidation of three-dimensional non-planar silicon structures plays an increasingly important role. In this paper, the three-dimensional finite element numerical simulator. Grwoth of oxide is a coupled process of diffusion of oxidant and deformation of oxide. Because boundaries of oxide are moved in each time step and LOCOS structure is formed three-dimensional shape of sruface, it is necessary to develope an efficient node control algorithm that can locally generate and eliminate the node. Therefore we have developed the optimized three-dimensional mesh generator which is cpable of refining and eliminating the meshes at the moving boundary of oxide, and hve developed three-dimensional finite element oxidation solver.

Keywords