E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제9권8호
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- Pages.789-798
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- 1996
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
2층 질하막 MNOS구조의 비휘발성 기억특성에 관한 연구
A study on the nonvolatile memory characteristics of MNOS structures with double nitride layer
초록
The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA.
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