Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 9 Issue 7
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- Pages.727-732
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- 1996
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
The properties of copper films deposited by RF magnetron sputtering
RF 마그네트론 스퍼터링법에 의해 증착된 구리막의 특성
Abstract
In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C