전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제33A권7호
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- Pages.171-175
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- 1996
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- 1016-135X(pISSN)
H$_{2}$ O 분위기에서 치밀화시킨 (densified) 산화막을 게이트 절연막으로 갖는 실리콘 전계방출소자의 제작
Fabrication of the silicon field emitter araays with H$_{2}$ O densified oxide as a gate insulator
초록
Gate insulator for Si field emitter is usually formed by e-beam evaporation. However, the evaported oxide requires densification for a stable process and a reduction of gate leakage which results from its Si-rich and nonstoicheiometric structure. In this study, we have developed the process technology able to densify the evaporated oxide in H
키워드