전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권12호
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- Pages.130-135
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- 1995
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- 1016-135X(pISSN)
Conventional UV 리소그라피와 경사각증착에 의한 0.5$mu$ m 전력용 CaAs MESFET 제작에 관한 연구
Studies on fabrication of 0.5$mu$ m GaAs power MESFET's using a conventional UV lithography and angle evaporations
초록
GaAs power MESFET's with 0.5 .mu.m gate length using a conventional UV lithography and angle evaporations are fabricated and then DC and RF characteristics are measured and carefully analyzed. The 0.5
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