전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권12호
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- Pages.136-141
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- 1995
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- 1016-135X(pISSN)
Air-Bridge 공정을 이용한 GaAs Power MESFET의 제작 및 특성 연구
Fabrication and Characteristics of GaAs Power MESFETs Using Air-Bridge Processes
초록
GaAs power MESFETs with 1 .mu.m gate length and an undoped GaAs surface layer on the doped GaAs channel are fabricated using IR(image reversal) and air-birdge processes. And then We have measured and calculated DC and RF characteristics. We have obtained saturation current 107-500 mA (197-255 mA/mm), maximum linear RF output power 111-518.8 mW (204-270 mW/mm), current gain cut-off frequency 7-10 GHz, maximum unilateral transducer power gain 5.7-12.7, and power added efficiencies 37.9-41.2 % from the devices with gate width 0.45-2.2 mm, at 6 GHz.
키워드