전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권9호
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- Pages.30-37
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- 1993
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- 1016-135X(pISSN)
Hot-Carrier로 인한 PMOSFET의 소자 수명시간 예측 모델링 II
A Lifetime Prediction Modeling for PMOSFET Degraded by Hot-Carrier (II)
초록
In this paper, we present a simple and general lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and gate current influence to solve a problem that that I
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