전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권9호
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- Pages.24-29
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- 1993
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- 1016-135X(pISSN)
GSMBE에 의한 단파장 GaInP/AIInP DBR 반도체 레이저 제작 및 특성
The 607nm GaInP/AlInP Distributed Bragg Reflector Visible Laser Grown by Gas source Molecular Beam
초록
The 607 nm GaInP/AlInP distributed bragg reflector (DBR) lasers using the second order gratings period of 184.7 nm were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional holographic method. GaInP/AlInP DBR lasers show single mode operations up to 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K is observed. No mode hopping was found in the temperature ranging from 120 to 165K.
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