Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 6
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- Pages.38-48
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- 1993
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- 1016-135X(pISSN)
Self-Aligned $n^+$ -pPolysilicon-Silicon Junction Structure Using the Recess Oxidation
Recess 산화를 이용한 자기정렬 $n^+$ -p 폴리실리콘-실리콘 접합구조
Abstract
A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n
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