대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제23권3호
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- Pages.370-375
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- 1986
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- 1016-135X(pISSN)
이온주입에 의한 다결정 실리콘의 고유저항 모델링
The Resistivity Modeling of Ion Implanted Polycrystalline Silicon
- 박종태 (연세대학교 전자공학과) ;
- 이문기 (연세대학교 전자공학과) ;
- 김봉렬 (연세대학교 전자공학과)
- Park, Jong Tae (Dept. Elec. Eng., Yonsei Univ.) ;
- Lee, Moon Key (Dept. Elec. Eng., Yonsei Univ.) ;
- Kim, Bong Ryul (Dept. Elec. Eng., Yonsei Univ.)
- 발행 : 1986.03.01
초록
In this paper, modeling of the conduction mechanism of ion implanted p-type polycrystalline silicon is studied. From this modeling, the resistivity of p-type polycrystalline and its dependence on dopant concentration are calculated. The proposed modeling whose grain size is about 1450 \ulcorneris shwon to agree well with the experimental result.
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