대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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Silicon Pressure Sensors Using Diffused Resistors

  • 권태하 (부산수산대학 전자통신공학과) ;
  • 이우일 (경북대학교 공과대학 전자공학과)
  • Kwon, Tae Ha (Dept. of Electronics and Communication Eng., National Fisheries Univ. of Pusan) ;
  • Lee, Wu Il (Dept. of Elec. Eng., Kyungpook National Univ.)
  • 발행 : 1986.03.01
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초록

Silicon diaphragms, 10 and 20 \ulcorner-thick and 1x1 mm\ulcornerarea, have been fabricated by means of the electrochemical P-N junction etch-stop technique. The P-type diffused resistors were formed on the diaphragm, and the piezoresistance effect was examined. It was been found that the fractional variation of the resistance is dependent on the diaphragm thickness, resistor location, and resistor length, etc. The 1.2 k\ulcornerfull-brige pressure sensor with 10\ulcorner-thick diaphragm exhibits a pressure sensitivity of 42 \ulcorner/V\ulcornermHg with a temperature coefficient of 2.3 mmHg/\ulcorner, and shows a good linearity in the pressure range from 0 to 300 mmHg.

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