Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.443-443
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- 2012
Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-film Transistors by AZO/Ag/AZO Multilayer Transparent Electrode
- No, Yeong-Su ;
- Yang, Jeong-Do ;
- Park, Dong-Hui ;
- Wi, Chang-Hwan ;
- Jo, Se-Hui ;
- Kim, Tae-Hwan ;
- Choe, Won-Guk
- 노영수 (한국과학기술연구원 한국과학기술연구원 미래융합기술연구본부장실) ;
- 양정도 (한국과학기술연구원 한국과학기술연구원 미래융합기술연구본부장실) ;
- 박동희 (한국과학기술연구원 한국과학기술연구원 미래융합기술연구본부장실) ;
- 위창환 (한국과학기술연구원 한국과학기술연구원 미래융합기술연구본부장실) ;
- 조세희 (한국과학기술연구원 한국과학기술연구원 미래융합기술연구본부장실) ;
- 김태환 (한양대학교 전기전자 컴퓨터공학부) ;
- 최원국 (한국과학기술연구원 한국과학기술연구원 미래융합기술연구본부장실)
- Published : 2012.02.08
Abstract
We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.
Keywords
- Ohmic contact;
- Dielectric-metal-dielectric multilayer;
- Indium Gallium Zinc Oxide;
- Source-drain current;
- Thin film transistor