Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on die electric characteristics of TIPS-pentacene transistors with variation of electrode thickness

소스/드레인 전극의 두께변화에 따른 TIPS-pentacene 트랜지스터의 전기적 특성 연구

  • 양진우 (홍익대학교 정보디스플레이학과) ;
  • 형건우 (홍익대학교 신소재공학과) ;
  • 김영관 (홍익대학교 정보디스플레이학과)
  • Published : 2009.06.18
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Abstract

We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

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