Influence of top AZO electrode deposited in hydrogen ambient on the efficiency of Si based solar cell

  • Published : 2009.06.18

Abstract

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

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