Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Submicron CMOSFET에서 기판 방향에 대한 소자 성능 의존성 분석

  • 박예지 (충남대학교 전자전파정보통신공학과) ;
  • 한인식 (충남대학교 전자전파정보통신공학과) ;
  • 박상욱 (충남대학교 전자전파정보통신공학과) ;
  • 권혁민 (충남대학교 전자전파정보통신공학과) ;
  • 복정득 (충남대학교 전자전파정보통신공학과) ;
  • 박병석 (충남대학교 전자전파정보통신공학과) ;
  • 이희덕 (충남대학교 전자전파정보통신공학과)
  • Published : 2009.11.12
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Abstract

In this paper, we investigated the dependence of HCI (Hot Carrier Immunity) degradation and device performance on channel orientation in sub-micron PMOSFET. Although device performance ($I_{D.sat}$ vs. $I_{Off}$) was improved as the transistor angle increased HC immunity was degraded. Therefore, consideration of reliability characteristics as well as dc device performance is highly necessary in channel stress engineering of next generation CMOSFETs.

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