한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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The Effect of H content in Si Precursor on the Performance of Poly-Si Crystallized by Pulsed YAG2${\omega}$ Laser on Soft Substrate

  • Li, Juan (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Ying, Yao (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Meng, Zhiguo (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Chunya, Wu (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Xiong, Shaozhen (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
  • Kwok, Hoi-Sing (Department of electronic and computer engineering The Hong Kong University of Science and Technology)
  • 발행 : 2009.10.12
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초록

YAG laser crystallization of Si-based thin film deposited on plastic substrate has been studied. The Si-based thin films as crystallization precursor are with varied hydrogen (H) content. The effect of the H content on the crystallinity of the resulted poly-Si film has been investigated. The experimental results of the poly-Si crystallized by doublefrequency YAG laser shows that the initial dehydrogenation process could be left out if ${\mu}c$-Si was adopted as the crystallization precursor. The YAG laser annealing condition on plastic substrate and the crystallization results have been discussed in the paper.

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