한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
- /
- Pages.1608-1611
- /
- 2009
Hydrogen Passivation for the Enhancement of Poly-Si Performance Crystallized By Double-Frequency YAG Laser
- Li, Juan (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
- Chong, Luo (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
- Ying, Yao (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
- He, Li (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
- Meng, Zhiguo (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
- Chunya, Wu (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
- Xiong, Shaozhen (Institute of Photo-electronics, Nankai University, The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education) ;
- Kwok, Hoi-Sing (Department of electronic and computer engineering The Hong Kong University of Science and Technology)
- 발행 : 2009.10.12
초록
Here the hydrogen passivation treatment has been adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). We have investigated the effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si and analyzed the mechanism of the hydrogen passivation preliminary. It has been found that the quality of the poly-Si annealed by YAG laser could be improved after proper hydrogen plasma treatment.