Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2008.06a
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- Pages.1185-1186
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- 2008
Simulation for Dose-Rate Latchup by Transient Radiation Pulse in CMOS Device
CMOS 소자에서 과도방사선펄스에 의한 Dose-Rate Latchup 모의실험
- Lee, Hyun-Jin (Korea Atomic Energy Research Institute) ;
- Lee, Nam-Ho (Korea Atomic Energy Research Institute) ;
- Hwang, Young-Gwan (Korea Atomic Energy Research Institute)
- Published : 2008.06.18
Abstract
A nuclear explosion emits a transient radiation pulse like gamma rays. Gamma rays have a high energy and cause unexpected effects in semiconductor devices. These effects are mainly referred to dose-rate latcup and dose-rate upset. By transient radiation pulse in CMOS devices, dose-rate latchup is simulated in this paper.
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