Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2008.06a
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- Pages.481-482
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- 2008
A Study on Solving the WSix Peeling Issue at MDDR DRAM
MDDR(Mobile Double Data Rate) DRAM의 WSix Peeling 불량 해결 연구
- Chae, Han-Yong (Samsung Semiconductor Institute of Technology(SSIT)) ;
- Lee, Sung-Young (Samsung Semiconductor Institute of Technology(SSIT)) ;
- Park, Tae-Hoon (FAB 3 Team, Memory Division Semiconductor Business) ;
- Lee, Hyun-Sung (FAB 3 Team, Memory Division Semiconductor Business) ;
- Lee, Kwang-Hee (FAB 3 Team, Memory Division Semiconductor Business) ;
- Seo, Ju-Won (FAB 3 Team, Memory Division Semiconductor Business) ;
- Choi, Kyue-Sang (FAB 3 Team, Memory Division Semiconductor Business)
- 채한용 (삼성전자 공과대학교) ;
- 이성영 (삼성전자 공과대학교) ;
- 박태훈 (MEMORY사업부 FAB3팀) ;
- 이현성 (MEMORY사업부 FAB3팀) ;
- 이광희 (MEMORY사업부 FAB3팀) ;
- 서주원 (MEMORY사업부 FAB3팀) ;
- 최규상 (MEMORY사업부 FAB3팀)
- Published : 2008.06.18
Abstract
In this paper, the advanced process has been presented to remove the WSix peeling that was made in sub 100nm DRAM SRCAT(Sphere-shaped-Recess-Ch annel-Array Transistor). The source of WSix peeling was proved to be the groove of gate poly film. We have completely solved the problems to adopt the gate-poly CMP (Chemical Mechanical Polishing) process.
Keywords