High voltage DC - DC boost converter by stacked structure

고전압 발생을 위한 스택 구조의 DC - DC boost 변환기

  • Kim, Young-Jae (School of Electrical and Computer Engineering Hanyang University) ;
  • Nam, Hyun-Suk (School of Electrical and Computer Engineering Hanyang University) ;
  • Ahn, Young-Kook (School of Electrical and Computer Engineering Hanyang University) ;
  • Roh, Jeong-Jin (School of Electrical and Computer Engineering Hanyang University)
  • 김영재 (한양대학교 전자전기제어계측공학부) ;
  • 남현석 (한양대학교 전자전기제어계측공학부) ;
  • 안영국 (한양대학교 전자전기제어계측공학부) ;
  • 노정진 (한양대학교 전자전기제어계측공학부)
  • Published : 2008.06.18

Abstract

In this paper, high voltage DC- DC boost converters by stacked structure of power transistors are proposed. These stacked power transistors are tolerant to output voltage higher than the process limit for individual CMOS transistors. The proposed circuits were designed in a standard 3.6V, $0.13{\mu}m$.

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