Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Program Efficiency of Nonvolatile Memory Device Based on SOI(Silicon-on-Insulator) under Partial and Full Depletion Conditions

SOI (Silicon-on-Insulator) 기반의 비휘발성 메모리 소자의 부분공핍 및 완전공핍 상태에서의 프로그램 효율

  • Cho, Seong-Jae (School of Electrical Engineering and Computer Science Seoul National University) ;
  • Park, Il-Han (School of Electrical Engineering and Computer Science Seoul National University) ;
  • Lee, Jung-Hoon (School of Electrical Engineering and Computer Science Seoul National University) ;
  • Son, Young-Hwan (School of Electrical Engineering and Computer Science Seoul National University) ;
  • Lee, Jong-Duk (School of Electrical Engineering and Computer Science Seoul National University) ;
  • Shin, Hyung-Cheol (School of Electrical Engineering and Computer Science Seoul National University) ;
  • Park, Byung-Gook (School of Electrical Engineering and Computer Science Seoul National University)
  • 조성재 (서울대학교 전기.컴퓨터공학부) ;
  • 박일한 (서울대학교 전기.컴퓨터공학부) ;
  • 이정훈 (서울대학교 전기.컴퓨터공학부) ;
  • 손영환 (서울대학교 전기.컴퓨터공학부) ;
  • 이종덕 (서울대학교 전기.컴퓨터공학부) ;
  • 신형철 (서울대학교 전기.컴퓨터공학부) ;
  • 박병국 (서울대학교 전기.컴퓨터공학부)
  • Published : 2008.06.18
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Abstract

There is difficulty in predicting the program efficiency of NOR type nonvolatile memory device adopting channel hot electron injection (CHEI) as program operation mechanism accurately since MOSFET on SOI has floating body. In this study, the dependence of program efficiency for SOI nonvolatile memory device of 200 nm channel length on SOI depletion conditions, partial depletion and full depletion, was quantitatively investigated with the aid of numerical device simulation [1].

Keywords