한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

투명 박막 트랜지스터 응용을 위한 RF Magnetron Sputtering으로 증착된 ZnO:Ga 박막의 특성

RF Magentron Sputtering deposited by ZnO:Ga thin film characterization for a transparent thin film transistor an application

  • 이석진 (충주대학교 전자공학과) ;
  • 권순일 (충주대학교 전자공학과) ;
  • 박승범 (충주대학교 전자공학과) ;
  • 정태환 (충주대학교 전자공학과) ;
  • 임동건 (충주대학교 전자공학과) ;
  • 박재환 (충주대학교 전자공학과) ;
  • 양계준 (충주대학교 전자공학과)
  • Lee, Seok-Jin (Department of Electronic Engineering, Chungju National University) ;
  • Kwon, Soon-Il (Department of Electronic Engineering, Chungju National University) ;
  • Park, Seung-Beum (Department of Electronic Engineering, Chungju National University) ;
  • Jung, Tae-Hwan (Department of Electronic Engineering, Chungju National University) ;
  • Lim, Dong-Gun (Department of Electronic Engineering, Chungju National University) ;
  • Park, Jea-Hwan (Department of Electronic Engineering, Chungju National University) ;
  • Yang, Kea-Joon (Department of Electronic Engineering, Chungju National University)
  • 발행 : 2008.11.06
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this paper we report upon an investigation into the effect of sputter RF power on the electrical properties of Gallium doped zinc oxide (ZnO:Ga) film. Structural, electrical and optical properties of the ZnO:Ga films were investigation in terms of the sputtering power. Working pressure fixed in 5 mtorr and RF powers the variable did with 50~100 W. The result, We were able to without substrate temperature obtain resistivity of $9.3\times10^{-4}{\Omega}cm$ and optical transmittance of 90%.

키워드