한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.122-122
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- 2008
Influence of the hydrogen post-annealing on the electrical properties of metal/alumina/silicon-nitride/silicon-oxide/silicon capacitors for flash memories
- Kim, Hee-Dong (School of Electrical Engineering, Korea University) ;
- An, Ho-Myoung (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Seo, Yu-Jeong (School of Electrical Engineering, Korea University) ;
- Zhang, Yong-Jie (School of Electrical Engineering, Korea University) ;
- Kim, Tae-Geun (School of Electrical Engineering, Korea University)
- 발행 : 2008.11.06
초록
Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift,