AlN 버퍼층위에 성장된 다결정 3C-SiC 박막의 라만 특성

Raman characteristics of polycrysta1line 3C-SiC thin films grown on AlN buffer layer

  • 이윤명 (울산대학교 전기전자정보시스텀공학부) ;
  • 정귀상 (울산대학교 전기전자정보시스텀공학부)
  • 발행 : 2008.11.06

초록

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

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