한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.92-92
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- 2008
가스흐름 제어에 의한 균일한 다결정 3C-SiC 박막 성장
The uniform polycrystalline 3C-SiC thin film growth by the gas flow control
- Yoon, Kyu-Hyung (School of Electrical Eng., University of Ulsan) ;
- Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
- 발행 : 2008.11.06
초록
The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of polycrystalline 3C-SiC thin films by the gas flow control according to the location change of geometric structure. The polycrystalline 3C-SiC thin film was deposited by APCVD(Atmospheric pressure chemical vapor deposition) at