한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

나노급 Ge-MOSFET를 위한 Ni-N(1%)을 이용한 Ni-germanide의 열 안정성 개선

Thermal Stability Improvement of Ni-Germanide Using Ni-N(1%) for Nano Scale Ge-MOSFET Technology

  • 임경연 (충남대학교 공과대학 전자공학과) ;
  • 박기영 (충남대학교 공과대학 전자공학과) ;
  • 장잉잉 (충남대학교 공과대학 전자공학과) ;
  • 이세광 (충남대학교 공과대학 전자공학과) ;
  • 종준 (충남대학교 공과대학 전자공학과) ;
  • 정순연 (충남대학교 공과대학 전자공학과) ;
  • 이가원 (충남대학교 공과대학 전자공학과) ;
  • 왕진석 (충남대학교 공과대학 전자공학과) ;
  • 이희덕 (충남대학교 공과대학 전자공학과)
  • Yim, Kyeong-Yeon (Dept. of Electronics Engineering, Chungnam National University) ;
  • Park, Kee-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhang, Ying-Ying (Dept. of Electronics Engineering, Chungnam National University) ;
  • Li, Shi-Guang (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhong, Zhun (Dept. of Electronics Engineering, Chungnam National University) ;
  • Jung, Soon-Yen (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University) ;
  • Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • 발행 : 2008.11.06
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초록

In this paper, 1%-nitrogen doped Nickel was used for improvement of thermal stability of Ni-Germanide. Proposed Ni-N(1%)/TiN structure has shown better thermal stability, sheet resistance and less agglomeration characteristic than pure Ni/TiN structure. During the germanidation process, it is believed that the nitrogen atoms in the deposited nickel layer can suppress the agglomeration of Ni germanide by retarding the diffusion of Ni atoms toward silicon layer, hence improve the thermal stability of Ni-germanide.

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