한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.15-16
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- 2008
DBD-PLD 방법을 이용하여 N 도핑된 ZnO 박막의 특성 조사
Properties of N doped ZnO grown by DBD-PLD
- Leem, Jae-Hyeon (KIST) ;
- Kang, Min-Seok (Kwangwoon Univ.) ;
- Song, Wong-Won (KIST) ;
- Lee, Sang-Yeol (KIST)
- 발행 : 2008.11.06
초록
We have grown N-doped ZnO thin films on sapphire substrate by employing dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound exciton peak (