한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.1323-1324
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- 2008
Development of Plasma Damage Free Sputtering Process for ITO Anode Formation Inverted Structure OLED
- Lee, You-Jong (Dept. of Display and Semiconductor Physics, Korea University) ;
- Jang, Jin-N. (Dept. of Display and Semiconductor Physics, Korea University) ;
- Yang, Ie-Hong (Dept. of Display and Semiconductor Physics, Korea University) ;
- Kim, Joo-Hyung (Dept. of Display and Semiconductor Physics, Korea University) ;
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Kwon, Soon-Nam
(Dept. of Display and Semiconductor Physics, Korea University) ;
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Hong, Mun-Pyo
(Dept. of Display and Semiconductor Physics, Korea University) ;
- Kim, Dae-C. (National Fusion Research Institute) ;
- Oh, Koung-S. (National Fusion Research Institute) ;
- Yoo, Suk-Jae (National Fusion Research Institute) ;
- Lee, Bon-J. (National Fusion Research Institute)
- Published : 2008.10.13
Abstract
We developed the Hyper-thermal Neutral Beam (HNB) sputtering process as a plasma damage free process for ITO top anode deposition on inverted Top emission OLED (ITOLED). For examining the effect of the HNB sputtering system, Inverted Bottom emission OLEDs (IBOLED) with ITO top anode electrode were fabricated; the characteristics of IBOLED using HNB sputtering process shows significant suppression of plasma induced damage.