Proceedings of the KSME Conference (대한기계학회:학술대회논문집)

The Korean Society of Mechanical Engineers (대한기계학회)
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MOS transistor probe for surface electric properties

표면 전기 특성 측정을 위한 MOS 트랜지스터 탐침 개발

  • 이상훈 (서울산업대학교, 자동차공학과) ;
  • 서재완 (포항공과대학교 기계공학과) ;
  • 임근배 (포항공과대학교 기계공학과) ;
  • 신현정 (국민대학교 신소재공학부) ;
  • 문원규 (포항공과대학교 기계공학과)
  • Published : 2008.11.05
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Abstract

We fabricate and evaluate the metal-oxide-semiconductor (MOS) transistor probe with the focused-ionbeam (FIB) for surface electric properties. The probes are designed with the rectangular and V-shaped structures, and their dimensions are determined considering the contact mode operation. The conductive nano tip is grown with FIB system, and deposition condition is controlled for the sharp tip. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions, and the results show the well defined measurement patterns.

Keywords