Characteristics of Organic Thin Film Transistors with UVtreated Surface of Synthesized Gate Insulator

  • Bong, Kang-Wook (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Park, Jae-Hoon (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Kang, Jong-Mook (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Kim, Hye-Min (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Lee, Hyun-Jung (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Yi, Mi-Hye (Dept. of Advanced Materials Div., Korea Research Institute of Chemical Technology) ;
  • Choi, Jong-Sun (Dept. of Electrical, Information & Control Engineering, Hongik University)
  • Published : 2007.08.27

Abstract

In this study, we report that the characteristics of OTFTs can be improved by the UV exposure of the surface of the synthesized photo-reactive gate insulator, and be optimized by controlling the exposure time. As a gate dielectric, the modified PVP was prepared by substituting hydroxyl group in PVP with cinnamoyl group. The synthesis details and the effects of the modified PVP on the device performance are discussed.

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