한국정보디스플레이학회:학술대회논문집
- 2007.08b
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- Pages.1284-1287
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- 2007
Characteristics of MINOS Structure using $TiO_2$ as Blocking Layer for Nonvolatile Memory applicable to OLED
- Lee, Kwang-Soo (School of Information and Communication Engineering, Sungkyunkwan University) ;
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Jung, Sung-Wook
(School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Kyung-Hae (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Jang, Kyung-Soo (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Hwang, Sung-Hyun (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Lee, Jeoung-In (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Park, Hyung-Jun (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Jae-Hong (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Son, Hyuk-Joo (School of Information and Communication Engineering, Sungkyunkwan University) ;
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Yi, Jun-Sin
(School of Information and Communication Engineering, Sungkyunkwan University)
- Published : 2007.08.27
Abstract
Titanium dioxide (
Keywords
- Titanium dioxide ($TiO_2$;
- );
- Non-Volatile Memory (NVM);
- Organic Light Emitting Diode (OLED);
- Metal-Insulator-Nitride-Oxide-Semiconductor (MINOS)