Investigation on Electrical Properties of TIPS Pentacene Organic Thin-film Transistors by Cr Thickness of Suspended Source/Drain

  • Kim, Kyung-Seok (Information Display Research Center, Korea Electronics Technology Institute, Dept. Electronic Engineering, Kyung Hee University) ;
  • Chung, Kwan-Soo (Dept. Electronic Engineering, Kyung Hee University) ;
  • Kim, Yong-Hoon (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Han, Jeong-In (Information Display Research Center, Korea Electronics Technology Institute)
  • Published : 2007.08.27

Abstract

We investigated the effect of Cr thickness on the electrical properties of triisopropylsilyl pentacene organic thin-film transistor (OTFT) employing suspended source-drain electrode. With Cr thickness of 10 nm, the field-effect mobility, on/off ratio and subthreshold slope were $0.017\;cm^2/Vs$, $8.78\;{\times}\;10^3$ and 10 V/decade, respectively. By increasing the Cr thickness to 100 nm, the fieldeffect mobility was increased to $0.032\;cm^2/Vs$, on/off ratio to $1.12{\times}10^5$ and subthreshold slope to 1 V/decade.

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