대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2006년도 하계종합학술대회
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- Pages.557-558
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- 2006
잉크젯 프린팅으로 제작된 유기 박막 트랜지스터의 이력특성 분석
Hysteresis characteristics of organic thin film transistors using inkjet printing
- 구남희 (포항공과대학교 전자전기공학과) ;
- 송승현 (포항공과대학교 전자전기공학과) ;
- 최길복 (포항공과대학교 전자전기공학과) ;
- 송근규 (삼성전자 LCD 총괄) ;
- 김보성 (삼성전자 LCD 총괄) ;
- 신성식 (삼성전자 LCD 총괄) ;
- 정윤하 (삼성전자 LCD 총괄)
- Goo, Nam-Hee (Department of Electronic and Electrical Engineering Pohang University of Science and Technology) ;
- Song, Seung-Hyun (Department of Electronic and Electrical Engineering Pohang University of Science and Technology) ;
- Choi, Gil-Bok (Department of Electronic and Electrical Engineering Pohang University of Science and Technology) ;
- Song, Keun-Kyoo (LCD Business, Samsung Electronics Co., Ltd.) ;
- Kim, Bo-Sung (LCD Business, Samsung Electronics Co., Ltd.) ;
- Shin, Sung-Sik (LCD Business, Samsung Electronics Co., Ltd.) ;
- Jeong, Yoon-Ha (LCD Business, Samsung Electronics Co., Ltd.)
- 발행 : 2006.06.21
초록
In this paper, the hysteresis characteristics by bias stress in organic thin film transistors using inkjet printing were investigated. Electron trapping increased threshold voltage for positive gate bias stress and hole trapping decreased threshold voltage for negative gate bias stress. From these phenomena, highly reproducible measurement method which minimized threshold voltage shift by choosing the proper range of gate voltage was suggested. Using this measurement method, we found that electron trapping as well as hole trapping had important influence on hysteresis characteristics.
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