대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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20 nm급 T-형 게이트 제작을 위한 2단 전자 빔 노광 공정

Two-step electron beam lithography to fabricate 20 nm T-gate

  • 이강승 (포항공과대학교 전자전기공학과) ;
  • 김영수 (포항공과대학교 전자전기공학과) ;
  • 이경택 (포항공과대학교 전자전기공학과) ;
  • 홍윤기 (포항공과대학교 전자전기공학과) ;
  • 정윤하 (포항공과대학교 전자전기공학과)
  • Lee, Kang-Sung (Department of Electronic and Electrical Engineering Pohang University of Science and Technology) ;
  • Kim, Young-Su (Department of Electronic and Electrical Engineering Pohang University of Science and Technology) ;
  • Lee, Kyung-Taek (Department of Electronic and Electrical Engineering Pohang University of Science and Technology) ;
  • Hong, Yun-Ki (Department of Electronic and Electrical Engineering Pohang University of Science and Technology) ;
  • Jeong, Yoon-Ha (Department of Electronic and Electrical Engineering Pohang University of Science and Technology)
  • 발행 : 2006.06.21
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초록

In this paper, we have proposed a novel process using two-step electron beam lithography to fabricate 20 nm T-gates for high performance MODFETs. Two-step lithography reduces electron forward scattering by defining the foot on a thin (100 nm) bottom-layer of polymethyl methacrylate (PMMA) at the second step, the T-gate head having been developed at the first step. Adopting a low temperature development technique for the second step reduces the detrimental effect of head exposure on foot definition. We have shown that 20 nm T-gate can be patterned with this process.

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