A New Planar Spiral Inductor with Multi-layered Bragg Reflector for Si-Based RF IC's

  • Linh Mai (School of Engineering, Information & Communications University (ICU)) ;
  • Lee Jae-Young (School of Engineering, Information & Communications University (ICU)) ;
  • Tuan Le Minh (School of Engineering, Information & Communications University (ICU)) ;
  • Su Pham Van (School of Engineering, Information & Communications University (ICU)) ;
  • Yoon Gi-Wan (School of Engineering, Information & Communications University (ICU))
  • Published : 2006.05.01

Abstract

In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the $S_{11}-parameter$ of the inductor.

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