BLT 박막의 CMP 공정시 압력에 따른 Surface Morphology 및 Defects 특성

Characteristics of Surface Morphology and Defects by Polishing Pressure in CMP of BLT Films

  • 정판검 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Jung, Pan-Gum (Department of Electrical Engineering, Chosun University) ;
  • Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)
  • 발행 : 2006.10.27

초록

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

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