PZT-CMP 공정시 후처리 공정에 따른 표면 특성

Surface Characteristics of PZT-CMP by Post-CMP Process

  • 전영길 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Jun, Young-Kil (Department of Electrical Engineering, Chosun University) ;
  • Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)
  • 발행 : 2006.10.27

초록

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

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