Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
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- Pages.1297-1298
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- 2006
A study for omega-shaped gate ZnO nanowire FET
Omega 형태의 게이트를 갖는 ZnO 나노선 FET에 대한 연구
- Keem, Ki-Hyun (Department of Electrical Engineering, Korea University) ;
- Kang, Jeong-Min (Department of Electrical Engineering, Korea University) ;
- Yoon, Chang-Joon (Department of Electrical Engineering, Korea University) ;
- Jeong, Dong-Young (Institute for Nano Science, Korea University) ;
- Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
- 김기현 (고려대학교 전기전자전파공학과) ;
- 강정민 (고려대학교 전기전자전파공학과) ;
- 윤창준 (고려대학교 전기전자전파공학과) ;
- 정동영 (고려대학교 나노중점연구소) ;
- 김상식 (고려대학교 전기전자전파공학과)
- Published : 2006.07.12
Abstract
Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by
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