Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.205-206
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- 2005
Properties of GST Thin Films for PRAM with Bottom Electrode
PRAM용 GST계 상변화 박막의 하부막에 따른 특성
- Jang, Nak-Won (Korea Maritime Univ.) ;
- Kim, Hong-Seung (Korea Maritime Univ.)
- Published : 2005.07.07
Abstract
PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials,