Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.203-204
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- 2005
Properties of GST Thin Films for PRAM with Composition
PRAM용 GST계 박막의 조성에 따른 특성
- Jung, Myung-Hun (Korea Maritime Univ.) ;
- Jang, Nak-Won (Korea Maritime Univ.) ;
- Kim, Hong-Seung (Korea Maritime Univ.) ;
- Ryu, Sang-Ouk (ETRI) ;
- Lee, Nam-Teal (ETRI) ;
- Yoon, Sung-Min (ETRI) ;
- Park, Young-Sam (ETRI) ;
- Lee, Seung-Yun (ETRI) ;
- Yu, Byoung-Gon (ETRI)
- 정명훈 (한국해양대학교) ;
- 장낙원 (한국해양대학교) ;
- 김홍승 (한국해양대학교) ;
- 류상욱 (한국전자통신연구원) ;
- 이남열 (한국전자통신연구원) ;
- 윤성민 (한국전자통신연구원) ;
- 박영삼 (한국전자통신연구원) ;
- 이승윤 (한국전자통신연구원) ;
- 유병곤 (한국전자통신연구원)
- Published : 2005.07.07
Abstract
PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials