Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
- /
- Pages.131-132
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- 2005
Capacitance Properties of Degraded Thyristor with Temperature and Voltage
가속열화된 사이리스터의 커패시턴스 특성
-
Seo, Kil-Soo
(Korea Electrotechnology Research Institute)
;
- Lee, Yang-Jae (Jinju Polytech Univ.) ;
-
Kim, Hyeng-Woo
(Korea Electrotechnology Research Institute)
;
-
Kang, In-Ho
(Korea Electrotechnology Research Institute)
;
-
Kim, Nam-Kyun
(Korea Electrotechnology Research Institute)
- Published : 2005.07.07
Abstract
In this paper, the capacitance properties of degraded thyristor with temperature and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100 - 10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.