Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.129-130
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- 2005
Investigation of the thyristor failure mechanism induced by stress
Thyristor 소자의 스트레스에 따른 소자파괴 메커니즘 연구
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Kim, Hyoung-Woo
(Korea Electrotechnology Research Institute)
;
-
Seo, Kil-Soo
(Korea Electrotechnology Research Institute)
;
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Kim, Sang-Cheol
(Korea Electrotechnology Research Institute)
;
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Kang, In-Ho
(Korea Electrotechnology Research Institute)
;
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Kim, Nam-Kyun
(Korea Electrotechnology Research Institute)
;
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Kim, Ein-Dong
(Korea Electrotechnology Research Institute)
- Published : 2005.07.07
Abstract
The electrical stress has a major effect on the long-term reliability of the thyristor. Therefore, it is needed to analyze the relationship between reliability and stress. In this paper, we investigate the device failure mechanism which induced by the stress. And also investigate the effect of the thermal stress on the device failure and relationship between electrical and thermal stress. Two-dimensional process simulator ATHENA and device simulator ATLAS are used to analyze the failure mechanism of the device.