한국정밀공학회:학술대회논문집 (Proceedings of the Korean Society of Precision Engineering Conference)
- 한국정밀공학회 2005년도 춘계학술대회 논문집
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- Pages.1489-1492
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- 2005
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- 2005-8446(pISSN)
UV NIL을 이용한 Lift-off가 용이한 패턴 형성 연구
Fabrications of nano-sized patterns using bi-layer UV Nano imprint Lithography
초록
Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.