Proceedings of the Korean Society of Precision Engineering Conference (한국정밀공학회:학술대회논문집)
- 2005.10a
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- Pages.326-329
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- 2005
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- 2005-8446(pISSN)
Effect of $Ga^+$ Ion Beam Irradiation On the Wet Etching Characteristic of Self-Assembled Monolayer
$Ga^+$ 이온 빔 조사량에 따른 자기 조립 단분자막의 습식에칭 특성
- Published : 2005.10.01
Abstract
As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to
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