• Title/Summary/Keyword: Ion dose

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Evaluation on Organ Dose and Image Quality by Changing kVp and Ion Chamber Combination while Taking Digital Chest Lateral Decubitus PA Projection (디지털 흉부 측와위 후전방향 검사 시 Ion chamber조합 설정과 관전압 변화에 따른 장기선량 및 화질 평가)

  • Lee, Jin-Soo;Park, Hyong-Hu
    • The Journal of the Korea Contents Association
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    • v.15 no.1
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    • pp.316-323
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    • 2015
  • In this study, we analyzed radiation dose and MTF with setting of Ion chamber and changing kVp so that we are able to suggest acquiring optimized diagnostic images and minimizing patient dose. we assumed right lateral decubitus position among chest decubitus projection and set 7 combination of Ion chamber. By changing kVp(100, 110, 120, 130kVp), we exposed x-ray five times respectively and calculated average value after measuring entrance dose. we input the entrance dose value to PCXMC Monte carlo simulation tool and calculated organ dose and effective dose. Then we did physical image evaluation with MTF for the purpose to compare image quality. As a result, the high kVp, entrance dose is reduced. As change of ion chamber, when selecting second ion chamber, both organ dose and effective dose were the lowest. In contrast, selecting first ion chamber was the highest. MTF is superior to set second Ion chamber and using 120 kVp. Consequently, when taking chest right lateral decubitus using Digital radiography, the optimized combination which have both reducing dose efficiently without declining image quality and aquring good qualified image is set 120 kVp and selecting second Ion chamber.

The Additional Filter and Ion Chamber Sensor Combination for Reducing Patient Dose in Digital Chest X-ray Projection (디지털 흉부엑스선 검사에서 환자선량 감소를 위한 부가필터와 Ion chamber 센서 조합)

  • Lee, Jinsoo;Kim, Changsoo
    • Journal of the Korean Society of Radiology
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    • v.9 no.3
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    • pp.175-181
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    • 2015
  • In this paper, we studied additional filter and Ion chamber combinations to reduce patient dose without decreasing image quality in digital chest x-ray projection. The experiment set 125 kVp, 320 mA, AEC mode. Ion chamber sensors was divided by 4 cases of combinations, then, we measured patient dose and calculated organ dose using PCXMC. Also, physical image assessment using MTF was performed. As a results, The surface entrance dose and organ dose were the lowest when selecting both left and right Ion chamber sensors under the same conditions of additional filter. In image quality assessment, The spatial frequency scored 2.494 lp/mm which was highest when selecting both right and left Ion-chambers and 0.1 mmCu filter. And to conclude, to select both right and left Ion chamber sensors and 0.1 mmCu filter will help for acquiring good quality image as well as reducing patient dose.

Wear Properties of Biocompatible Ti Implant due to Nitrogen Ion Implantation (질소이온주입에 따른 생체안전성 티타늄 임플란트의 마모특성)

  • 최종운;손선희;변응선;정용수
    • Journal of the Korean Society of Safety
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    • v.14 no.4
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    • pp.126-134
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    • 1999
  • In this study, plasma source ion implantation was used to improve the wear properties of biocompatible titanium implant. In order to observe the effect of ion energy and dose on wear property of titanium implant, pin-on-disk type wear tests in Hank's solution were carried out. The friction coefficient of ion implanted specimens were increased from 0.47 to 0.65 under high energy and ion dose conditions. As increasing ion energy and ion dose, the amount of wear was reduced.

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Stabilization of Modified Deceleration Mode for Improvement of Low-energy Ion Implantation Process (저 에너지 이온 주입의 개선을 위한 변형된 감속모드 이온 주입의 안정화 특성)

  • 서용진;박창준;김상용
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.3
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    • pp.175-180
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    • 2003
  • As the integrated circuit device shrinks to the deep submicron regime, the ion implantation process with high ion dose has been attracted beyond the conventional ion implantation technology. In particular, for the case of boron ion implantation with low energy and high dose, the stabilization and throughput of semiconductor chip manufacturing are decreasing because of trouble due to the machine conditions and beam turning of ion implanter system. In this paper, we focused to the improved characteristics of processing conditions of ion implantation equipment through the modified deceleration mode. Thus, our modified recipe with low energy and high ion dose can be directly apply in the semiconductor manufacturing process without any degradation of stability and throughput.

Ion Beam Assisted Crystallization Behavior of Sol-Gel Derived $PbTiO_3$ Thin Films

  • Oh, Young-Jei;Oh, Tae-Sung;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.48-53
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    • 1996
  • Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

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High-Dose-Rate Electron-Beam Dosimetry Using an Advanced Markus Chamber with Improved Ion-Recombination Corrections

  • Jeong, Dong Hyeok;Lee, Manwoo;Lim, Heuijin;Kang, Sang Koo;Jang, Kyoung Won
    • Progress in Medical Physics
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    • v.31 no.4
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    • pp.145-152
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    • 2020
  • Purpose: In ionization-chamber dosimetry for high-dose-rate electron beams-above 20 mGy/pulse-the ion-recombination correction methods recommended by the International Atomic Energy Agency (IAEA) and the American Association of Physicists in Medicine (AAPM) are not appropriate, because they overestimate the correction factor. In this study, we suggest a practical ion-recombination correction method, based on Boag's improved model, and apply it to reference dosimetry for electron beams of about 100 mGy/pulse generated from an electron linear accelerator (LINAC). Methods: This study employed a theoretical model of the ion-collection efficiency developed by Boag and physical parameters used by Laitano et al. We recalculated the ion-recombination correction factors using two-voltage analysis and obtained an empirical fitting formula to represent the results. Next, we compared the calculated correction factors with published results for the same calculation conditions. Additionally, we performed dosimetry for electron beams from a 6 MeV electron LINAC using an Advanced Markus® ionization chamber to determine the reference dose in water at the source-to-surface distance (SSD)=100 cm, using the correction factors obtained in this study. Results: The values of the correction factors obtained in this work are in good agreement with the published data. The measured dose-per-pulse for electron beams at the depth of maximum dose for SSD=100 cm was 115 mGy/pulse, with a standard uncertainty of 2.4%. In contrast, the ks values determined using the IAEA and AAPM methods are, respectively, 8.9% and 8.2% higher than our results. Conclusions: The new method based on Boag's improved model provides a practical method of determining the ion-recombination correction factors for high dose-per-pulse radiation beams up to about 120 mGy/pulse. This method can be applied to electron beams with even higher dose-per-pulse, subject to independent verification.

The Effects of the Incident Nitrogen Ion Dose on the Plasma Immersion Ion Implantation of Nimonic 80A (Nimonic 80A의 PIII에 미치는 질소이온주입량의 영향)

  • You, Y.Z.;Chun, H.G.;Kim, D.I.;Cha, B.C.;Koo, K.W.
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.6
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    • pp.369-374
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    • 2005
  • Nitrogen ion implantation in Nimonic 80A using plasma immersion ion implantation (PIII) was investigated at a pulse voltage of -60 kV and ion dose of $3{\times}10^{17}{\sharp}/cm^2$, $6{\times}10^{17}{\sharp}/cm^2$, $12{\times}10^{17}{\sharp}/cm^2$. PIII is an effective technology to improve the surface hardness and wear resistance of materials. And also this technology is not limited by the shape and size of materials. PIII would be a promising technique in the future. Surface hardness and wear resistance of the $N^+$ ion implanted Nimonic 80A were increased with the increase in the incident ion dose. The surface hardness of the untreated Nimonic 80A is 420 Hv, the hardness of implanted Nimonic 80A is 1050 Hv at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The wear loss of the untreated is 82.5 mg, the wear loss of the implanted is 0.004g at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The $Cr_2N$ is detected on the surface of the implanted Nimonic 80A by XRD analysis.

A Study on the Surface Treatment of Spectra Fibers Using an ion Assisted Reaction Method (이온도움 반응법을 이용한 스펙트라 섬유의 표면처리에 대한 연구)

  • 이경엽;신동혁;지창헌
    • Journal of the Korean institute of surface engineering
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    • v.35 no.5
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    • pp.319-324
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    • 2002
  • It is known that ion-assisted reaction method is effective for the surface modification of polymers. The surface treatment of Spectra fibers using the ion-assisted reaction method was investigated in the present study The Spectra fibers were treated by $Ar^{+}$ / ion irradiation under oxygen environment. The treatment was carried out at different $Ar^{+}$ ion doses. The$ Ar^{+ }$ /ion doses used were $6$\times$10^{15}$ , $1$\times$10^{16}$ , $5$\times$10^{16}$ , $1$\times$10^{17}$ / ions/$\m^2$. Optimal $Ar^{+}$ ion dose in the treatment of Spectra fibers was determined by measuring the tensile strength and modulus of Spectra/vinylester composites as a function of ion dose. It was found that the optimal ion dose was $1$\times$10^{16}$ions/$\m^2$. It was also found from the scanning electron microscope examination that the surface-treatment improved adhesion between fibers and vinylester resin.

Secondary Neutron Dose in Carbon-ion Radiotherapy: Investigations in QST-NIRS

  • Yonai, Shunsuke;Matsumoto, Shinnosuke
    • Journal of Radiation Protection and Research
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    • v.46 no.2
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    • pp.39-47
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    • 2021
  • Background: The National Institutes for Quantum and Radiological Science and Technology-National Institute of Radiological Sciences (QST-NIRS) has continuously investigated the undesired radiation exposure in ion beam radiotherapy mainly in carbon-ion radiotherapy (CIRT). This review introduces our investigations on the secondary neutron dose in CIRT with the broad and scanning beam methods. Materials and Methods: The neutron ambient dose equivalents in CIRT are evaluated based on rem meter (WENDI-II) measurements. The out-of-field organ doses assuming prostate cancer and pediatric brain tumor treatments are also evaluated through the Monte Carlo simulation. This evaluation of the out-of-field dose includes contributions from secondary neutrons and secondary charged particles. Results and Discussion: The measurements of the neutron ambient dose equivalents at a 90#x00B0; angle to the beam axis in CIRT with the broad beam method show that the neutron dose per treatment dose in CIRT is lower than that in proton radiotherapy (PRT). For the scanning beam with the energy scanning technique, the neutron dose per treatment dose in CIRT is lower than that in PRT. Moreover, the out-of-field organ doses in CIRT decreased with distance to the target and are less than the lower bound in intensity-modulated radiotherapy (IMRT) shown in AAPM TG-158 (American Association of Physicists in Medicine Task Group). Conclusion: The evaluation of the out-of-field doses is important from the viewpoint of secondary cancer risk after radiotherapy. Secondary neutrons are the major source in CIRT, especially in the distant area from the target volume. However, the dose level in CIRT is similar or lower than that in PRT and IMRT, even if the contributions from all radiation species are included in the evaluation.

Micro/nano Tribological and Water Wetting Characteristics of Ion Beam Treated PTFE Surfaces

  • Yoon, Eui-Sung;Oh, Hyun-Jin;Yang, Seung-Ho;Kong, Hosung
    • KSTLE International Journal
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    • v.3 no.1
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    • pp.12-16
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    • 2002
  • Micro/nano tribological and water wetting characteristics of ion beam treated PTFE (polytetrafluoroethylene) surfaces were experimentally studied. The ion beam treatment was performed with a hollow cathode ion gun at different argon ion dose conditions in a vacuum chamber to modify the topography of PTFE surface. Micro/nano tribological characteristics, water wetting angles and roughness were measured with a micro tribe tester, SPM (scanning probe microscope), contact anglemeter and profilometer, respectively. Results showed that surface roughness increased with the argon ion dose. Water wetting angle of the ion beam treated samples increased with the ion dose, so the surface shows an ultra-hydrophobic nature. Micro-adhesion and micro-friction depend on the wetting characteristics of the PTFE samples. However, nano-tribological characteristics showed different results. The scale effect of surface topography on tribological characteristics was discussed. Also, the water wetting characteristics of modified PTFE samples were discussed in terms of the surface topographic characteristics.